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Inductively Coupled Plasma RIE (ICP-RIE) is an etch technology often used in specialty semiconductor markets for device manufacturing.
This technology can combine both chemical reactions and ion-induced etching. The independent control of ion flux enables high process flexibility.
Deep silicon etching
Bosch process capability : C4F8 and SF6
ICP source 1200 W at 13.56 MHz driven parallel plate reactor
Wide temperature range substrate electrode: -150 to + 400 °C
Gasses: C4F8, CHF3, CF4, SF6, O2, Ar
Vacuum load lock
Shower head gas inlet optimized for RIE
High conductance vacuum layout
Dr. Salvatore Bagiante
Methoden & Expertise zur Forschungsinfrastruktur
Micro- and nanofabrication processing, development of new processes, characterization, training