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Inductively Coupled Plasma RIE (ICP-RIE) is an etch technology often used in specialty semiconductor markets for device manufacturing.
This technology can combine both chemical reactions and ion-induced etching. The independent control of ion flux enables high process flexibility.
Gasses: BCl3, Cl2, SF6, CHF3, C4F8, O2, Ar
Vacuum load lock
Showerhead gas inlet optimized for RIE
High conductance vacuum layout
PC 2000 Control
ICP source 1200 W at 13.56 MHz
Substrate electrode temperature range: -30 - + 80 °C
Dr. Salvatore Bagiante
Methoden & Expertise zur Forschungsinfrastruktur
Micro- and nanofabrication processing, development of new processes, characterization, training