ICP-RIE etcher (Cl)

Institute of Science and Technology Austria (ISTA)

Klosterneuburg | Website

Large equipment

Short Description

Inductively Coupled Plasma RIE (ICP-RIE) is an etch technology often used in specialty semiconductor markets for device manufacturing.
This technology can combine both chemical reactions and ion-induced etching. The independent control of ion flux enables high process flexibility.

Gasses: BCl3, Cl2, SF6, CHF3, C4F8, O2, Ar
Vacuum load lock
Showerhead gas inlet optimized for RIE
High conductance vacuum layout
PC 2000 Control
ICP source 1200 W at 13.56 MHz
Substrate electrode temperature range: -30 - + 80 °C

Contact Person

Dr. Salvatore Bagiante

Research Services


Methods & Expertise for Research Infrastructure

Micro- and nanofabrication processing, development of new processes, characterization, training

Allocation to Core Facility

Nanofabrication Facility

Information on terms of use, cooperation and fees is provided upon request. All such information is defined in a scientific collaboration agreement.