ICP-RIE etcher (F)

Institute of Science and Technology Austria (IST Austria)

Klosterneuburg | Website

Großgerät

Kurzbeschreibung

Inductively Coupled Plasma RIE (ICP-RIE) is an etch technology often used in specialty semiconductor markets for device manufacturing.
This technology can combine both chemical reactions and ion-induced etching. The independent control of ion flux enables high process flexibility.

Deep silicon etching
Bosch process capability : C4F8 and SF6
ICP source 1200 W at 13.56 MHz driven parallel plate reactor
Wide temperature range substrate electrode: -150 to + 400 °C
Gasses: C4F8, CHF3, CF4, SF6, O2, Ar
Vacuum load lock
Shower head gas inlet optimized for RIE
High conductance vacuum layout

Ansprechperson

Dr. Salvatore Bagiante

Research Services

Physics

Methoden & Expertise zur Forschungsinfrastruktur

Micro- and nanofabrication processing, development of new processes, characterization, training

Zuordnung zur Core Facility

Cleanroom

Information on terms of use, cooperation and fees is provided upon request. All such information is defined in a scientific collaboration agreement.